Postdoctoral Appointee - New Oxide Heterostructures
Posted: October 22, 2021
Application Deadline: Open Until Filled
Job DescriptionAs part of a planned expansion in research activities in microelectronics at Argonne National Laboratory, in partnership with universities and industry, we have an post-doctoral position open for carrying out fundamental and multidisciplinary research on new materials discovery and algorithmic/architectural approaches that can inform them; for new ultra-dense digital memories, and fast synaptic memory for neuromorphic applications.
New oxide heterostructures for ultra-dense and synaptic memory (Materials Science Division): We seek candidates with a background in semiconductor and oxide heterostructure research and a strong interest in microelectronics research. Experience with thin film deposition of semiconductors or oxides and the electrical characterization of semiconductor devices is essential. Expertise with ultra-high vacuum, molecular beam epitaxy, atomic layer deposition and sputter deposition is highly desirable, as is experience with cleanroom based semiconductor fabrication techniques and device processing.
The post-doctoral scientist will carry out research on new oxide based heterostructures that can have (i) highly controllable programmable resistances for near analog synaptic devices and operation for cross-bar arrays; and (ii) structures for 3-D digital memory that can achieve DNA class densities. The research will involve materials design and synthesis using MBE and other deposition techniques, fabrication of test device structures and their electrical characterization. The research will involve close collaboration with the theory and characterization groups, as well as with device engineers.
A Ph.D. in materials science, applied physics or a related field is essential. The position will be under the supervision of Supratik Guha. More information about his group may be found in https://guha-lab.pme.uchicago.edu/.
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